收藏本站
ZXMN3A02N8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current V GS =-10V; T A =25°C (b)
V GS =-10V; T A =70°C (b)
V GS =-10V; T A =25°C (a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
Power Dissipation at T A =25°C (a)
Linear Derating Factor
Power Dissipation at T A =25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V DSS
V GS
I D
I DM
I S
I SM
P D
P D
T j :T stg
LIMIT
30
20
9.0
7.2
7.3
44
3.2
44
1.56
12.5
2.5
20
-55 to +150
UNIT
V
V
A
A
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R θ JA
R θ JA
VALUE
80
50
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 s - pulse width limited by maximum junction temperature.
ISSUE 4 - JANUARY 2005
SEMICONDUCTORS
2
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
ZXMN3A02X8TA MOSFET N-CH 30V 5.3A 8-MSOP
ZXMN3A03E6TC MOSFET N-CHAN 30V SOT23-6
ZXMN3A04DN8TC MOSFET DUAL N-CHAN 30V 8SOIC
ZXMN3A04KTC MOSFET N-CH 30V 18.4A DPAK
ZXMN3A06DN8TC MOSFET DUAL N-CHAN 30V 8SOIC
ZXMN3A14FTA MOSFET N-CH 30V 3.2A SOT23-3
ZXMN3AM832TA MOSFET N-CHAN DUAL 30V 8MLP
ZXMN3AMCTA MOSFET 2N-CH 30V 2.9A DFN
相关代理商/技术参数
ZXMN3A02N8TC 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN3A02X8 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN3A02X8TA 功能描述:MOSFET 30V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN3A02X8TC 功能描述:MOSFET 30V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN3A03E6 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23-6 制造商:Diodes Incorporated 功能描述:MOSFET, N, SOT-23-6 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 30V, 4.6A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:4.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; No. of Pins:6 ;RoHS Compliant: Yes
ZXMN3A03E6 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23-6
ZXMN3A03E6_05 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN3A03E6TA 功能描述:MOSFET 30V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube